Maximizing energy utilization in DMD-based projection lithography
Specifically, the light incident angle is optimized for 343 nm laser and 7.56 μm pitch-size DMD, and the maximum single-order diffraction efficiency E diffraction is increased from 40% to 96%. Experimentally, we use the effective energy utilization η eff = E diffraction, (m,n) /Σ [E diffraction, (m,n)] at the entrance pupil plane of the ...
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